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Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1

Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 890 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V

GBP 0.38

1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 890 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V

GBP 0.40

1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 890 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V

GBP 0.40

1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 890 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V

GBP 0.40

1

Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1

Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 890 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V

GBP 0.38

1

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Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 15 A, 600 V, 3 + Tab-Pin TO-220FP IPAW60R380CEXKSA1

Infineon N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP IPA60R400CEXKSA1

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