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Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, 103 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.18
1

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, 103 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.43
1

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

Infineon Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, 103 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.27
1