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STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z, MPN: STGIPQ4C60T-HZ

EUR 8.35

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série, MPN: STGIPQ4C60T-HZ

EUR 8.35

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics IGBT, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie, MPN: STGIPQ4C60T-HZ

EUR 8.35

1

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z, Tensione massima gate emitter: 600V, Dissipazione di potenza massima: 12,5 W, Configurazione transistor: Serie, MPN: STGIPQ4C60T-HZ

EUR 7.24

1

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z, Tensione massima gate emitter: 600V, Dissipazione di potenza massima: 12,5 W, Configurazione transistor: Serie, MPN: STGIPQ4C60T-HZ

EUR 8.52

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série, Tension Grille Emetteur maximum: 600V, Dissipation de puissance maximum: 12,5 W, MPN: STGIPQ4C60T-HZ

EUR 7.24

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série, Tension Grille Emetteur maximum: 600V, Dissipation de puissance maximum: 12,5 W, MPN: STGIPQ4C60T-HZ

EUR 8.52

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics IGBT, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie, Tensión Máxima Puerta-Emisor: 600V, Disipación de Potencia Máxima: 12,5 W, MPN: STGIPQ4C60T-HZ

EUR 8.52

1

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics IGBT, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie, Tensión Máxima Puerta-Emisor: 600V, Disipación de Potencia Máxima: 12,5 W, MPN: STGIPQ4C60T-HZ

EUR 7.24

1

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 20A, 650V, DO-247, Configuration de diode: Simple, Type diode: Schottky SiC, Chute minimale de tension directe: 1.65V, courant direct de surcharge non-répétitif de crête: 400A, MPN: STPSC20065WY

EUR 8.45

1

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 20A, 650V, DO-247, Configuration de diode: Simple, Type diode: Schottky SiC, Chute minimale de tension directe: 1.65V, courant direct de surcharge non-répétitif de crête: 400A, MPN: STPSC20065WY

EUR 7.17

1

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 20A, 650V, DO-247, Configuration de diode: Simple, Type diode: Schottky SiC, Chute minimale de tension directe: 1.65V, courant direct de surcharge non-répétitif de crête: 400A, MPN: STPSC20065WY

EUR 5.34

1

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247, Configurazione diodi: Singolo, Diodo: SiC Schottky, Caduta di tensione diretta massima: 1.65V, Corrente di picco su surge non ripetitiva: 400A, MPN: STPSC20065WY

EUR 5.34

1

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247, Configurazione diodi: Singolo, Diodo: SiC Schottky, Caduta di tensione diretta massima: 1.65V, Corrente di picco su surge non ripetitiva: 400A, MPN: STPSC20065WY

EUR 7.17

1

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247, Configurazione diodi: Singolo, Diodo: SiC Schottky, Caduta di tensione diretta massima: 1.65V, Corrente di picco su surge non ripetitiva: 400A, MPN: STPSC20065WY

EUR 8.45

1

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247, Configuration de diode: Simple, Type de redressement: Haute tension, Type diode: Jonction au silicium, Chute minimale de tension directe: 2V, Temps de recouvrement inverse crête: 115ns, MPN: STTH6010W

EUR 5.05

1

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247, Configuration de diode: Simple, Type de redressement: Haute tension, Type diode: Jonction au silicium, Chute minimale de tension directe: 2V, Temps de recouvrement inverse crête: 115ns, MPN: STTH6010W

EUR 5.16

3

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247, Configuration de diode: Simple, Type de redressement: Haute tension, Type diode: Jonction au silicium, Chute minimale de tension directe: 2V, Temps de recouvrement inverse crête: 115ns, MPN: STTH6010W

EUR 5.61

3

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL, Configuration de diode: Simple, Type diode: Schottky, Chute minimale de tension directe: 2.25V, Technologie de diode: Schottky SiC, courant direct de surcharge non-répétitif de crête: 420A, MPN: STPSC10H12WL

EUR 6.01

1

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL, Configuration de diode: Simple, Type diode: Schottky, Chute minimale de tension directe: 2.25V, Technologie de diode: Schottky SiC, courant direct de surcharge non-répétitif de crête: 420A, MPN: STPSC10H12WL

EUR 7.08

1

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL, Configuration de diode: Simple, Type diode: Schottky, Chute minimale de tension directe: 2.25V, Technologie de diode: Schottky SiC, courant direct de surcharge non-répétitif de crête: 420A, MPN: STPSC10H12WL

EUR 6.37

1

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL, Configurazione diodi: Singolo, Diodo: Schottky, Caduta di tensione diretta massima: 2.25V, Tecnologia del diodo: SiC Schottky, Corrente di picco su surge non ripetitiva: 420A, MPN: STPSC10H12WL

EUR 7.08

1

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL, Configurazione diodi: Singolo, Diodo: Schottky, Caduta di tensione diretta massima: 2.25V, Tecnologia del diodo: SiC Schottky, Corrente di picco su surge non ripetitiva: 420A, MPN: STPSC10H12WL

EUR 6.37

1

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL, Configurazione diodi: Singolo, Diodo: Schottky, Caduta di tensione diretta massima: 2.25V, Tecnologia del diodo: SiC Schottky, Corrente di picco su surge non ripetitiva: 420A, MPN: STPSC10H12WL

EUR 6.01

1

STMicroelectronics Diode traversante, 60A, 1200V, DO-247

STMicroelectronics Diode traversante, 60A, 1200V, DO-247, Configuration de diode: Simple, Type de redressement: Commutation, Type diode: Jonction au silicium, Chute minimale de tension directe: 2.25V, Temps de recouvrement inverse crête: 125ns, courant direct de surcharge non-répétitif de crête: 400A, MPN: STTH6012W

EUR 5.28

1

Marque

Genre

Marchand

Prix (EUR)

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, VCE 600 V, IC 6 A, N2DIP-26L TIPO Z

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT, STGIPQ4C60T-HZ,, 6 A, 600 V, N2DIP-26L type Z, 26 broches, Série

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics IGBT, STGIPQ4C60T-HZ, 6 A, 600 V, N2DIP-26L TIPO Z, 26-Pines 6 Serie

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diodo, Su foro, 20A, 650V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 60A, 1000V, DO-247

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diodo, Su foro, 10A, 1200V, DO-247LL

STMicroelectronics Diode traversante, 60A, 1200V, DO-247

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