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Infineon Módulo accionador IGBT IR2127STRPBF, 500 mA SOIC 8 pines

EUR 2.21

1

Infineon Module driver IGBT IR2127STRPBF 500 mA 3V, 8 broches, SOIC

EUR 2.21

1

Infineon Modulo driver IGBT IR2127STRPBF, 500 mA, 3V, SOIC, 8-Pin

EUR 2.21

1

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK, Tensione massima drain source: 500 V, Numero pin: 3, Tensione di soglia gate massima: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK, Tensione massima drain source: 500 V, Numero pin: 3, Tensione di soglia gate massima: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon Module driver IGBT IR2127STRPBF 500 mA 3V, 8 broches, SOIC

Infineon Module driver IGBT IR2127STRPBF 500 mA 3V, 8 broches, SOIC, Temps de descente: 40ns

EUR 2.45

1

Infineon Modulo driver IGBT IR2127STRPBF, 500 mA, 3V, SOIC, 8-Pin

Infineon Modulo driver IGBT IR2127STRPBF, 500 mA, 3V, SOIC, 8-Pin, Tempo di discesa: 40ns

EUR 2.45

1

Infineon Módulo accionador IGBT IR2127STRPBF, 500 mA SOIC 8 pines

Infineon Módulo accionador IGBT IR2127STRPBF, 500 mA SOIC 8 pines, Tensión de Alimentación: 3V, Tiempo de Bajada: 40ns

EUR 2.45

1

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches, Résistance Drain Source maximum: 500 mO, Tension de seuil maximale de la grille: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches, Résistance Drain Source maximum: 500 mO, Tension de seuil maximale de la grille: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon MOSFET canal N,, PG-TO 252 9 A 500 V, 3 broches

Infineon MOSFET canal N,, PG-TO 252 9 A 500 V, 3 broches, MPN: IPD50R650CEAUMA1

EUR 0.67

1

Infineon MOSFET canal N,, DPAK (TO-252) 4,8 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 4,8 A 500 V, 3 broches, MPN: IPD50R1K4CEAUMA1

EUR 0.58

1

Infineon MOSFET canal N,, To-220 FullPAK 5,4 A 500 V, 3 broches

Infineon MOSFET canal N,, To-220 FullPAK 5,4 A 500 V, 3 broches, MPN: IPA50R500CEXKSA2

EUR 1.06

1

Infineon MOSFET canal N,, DPAK (TO-252) 6 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 6 A 500 V, 3 broches, MPN: IRFR825TRPBF

EUR 1.06

1

Infineon MOSFET canal N,, DPAK (TO-252) 2,2 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 2,2 A 500 V, 3 broches, MPN: IPD50R2K0CEAUMA1

EUR 0.47

1

Infineon MOSFET canal N,, DPAK (TO-252) 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 7,6 A 500 V, 3 broches, MPN: IPD50R500CEAUMA1

EUR 0.85

1

Infineon MOSFET canal N,, DPAK (TO-252) 5 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 5 A 500 V, 3 broches, MPN: IPD50R800CEAUMA1

EUR 0.30

1

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK, MPN: IPAN50R500CEXKSA1

EUR 1.06

1

Infineon MOSFET, IPAN50R500CEXKSA1, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK

Infineon MOSFET, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK, Resistencia Máxima Drenador-Fuente: 500 meses, Tensión de umbral de puerta máxima: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon MOSFET, IPAN50R500CEXKSA1, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK

Infineon MOSFET, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK, Resistencia Máxima Drenador-Fuente: 500 meses, Tensión de umbral de puerta máxima: 3.5V, MPN: IPAN50R500CEXKSA1

EUR 1.16

1

Infineon MOSFET canal N,, Jusqu'à 220 Full PAK 6,6 A 500 V, 3 broches

Infineon MOSFET canal N,, Jusqu'à 220 Full PAK 6,6 A 500 V, 3 broches, MPN: IPA50R950CEXKSA2

EUR 0.88

1

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches, Type de montage: CMS, Dissipation de puissance maximum: 500 mW, Tension Collecteur Base maximum: 50 V, Fréquence de fonctionnement maximum: 170 MHz, Dimensions: 2.9 x 1.3 x 0.9mm, Température d'utilisation maximum: +150 °C, Tension de saturation Collecteur Emetteur maximum: 0.7 V, MPN: BC817K40E6327HTSA1

EUR 0.10

1

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches, Type de montage: CMS, Dissipation de puissance maximum: 500 mW, Tension Collecteur Base maximum: 50 V, Fréquence de fonctionnement maximum: 170 MHz, Dimensions: 2.9 x 1.3 x 0.9mm, Température d'utilisation maximum: +150 °C, Tension de saturation Collecteur Emetteur maximum: 0,7 V, MPN: BC817K40E6327HTSA1

EUR 0.04

1

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale, Dissipazione di potenza massima: 500 mW, Configurazione transistor: Singolo, Tensione massima base del collettore: 50 V, Frequenza operativa massima: 170 MHz, Dimensioni: 2.9 x 1.3 x 0.9mm, Massima temperatura operativa: +150 °C, Tensione massima di saturazione collettore emitter: 0,7 V, MPN: BC817K40E6327HTSA1

EUR 0.04

1

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale, Dissipazione di potenza massima: 500 mW, Configurazione transistor: Singolo, Tensione massima base del collettore: 50 V, Frequenza operativa massima: 170 MHz, Dimensioni: 2.9 x 1.3 x 0.9mm, Massima temperatura operativa: +150 °C, Tensione massima di saturazione collettore emitter: 0,7 V, MPN: BC817K40E6327HTSA1

EUR 0.10

1

Marque

Genre

Marchand

Prix (EUR)

Infineon Módulo accionador IGBT IR2127STRPBF, 500 mA SOIC 8 pines

Infineon Module driver IGBT IR2127STRPBF 500 mA 3V, 8 broches, SOIC

Infineon Modulo driver IGBT IR2127STRPBF, 500 mA, 3V, SOIC, 8-Pin

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon Module driver IGBT IR2127STRPBF 500 mA 3V, 8 broches, SOIC

Infineon Modulo driver IGBT IR2127STRPBF, 500 mA, 3V, SOIC, 8-Pin

Infineon Módulo accionador IGBT IR2127STRPBF, 500 mA SOIC 8 pines

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, Câble étroit Full PAK TO-220 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, PG-TO 252 9 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 4,8 A 500 V, 3 broches

Infineon MOSFET canal N,, To-220 FullPAK 5,4 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 6 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 2,2 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 7,6 A 500 V, 3 broches

Infineon MOSFET canal N,, DPAK (TO-252) 5 A 500 V, 3 broches

Infineon MOSFET, canale N, 500 MO, 7,6 A, Cavo stretto TO-220 FullPAK

Infineon MOSFET, IPAN50R500CEXKSA1, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK

Infineon MOSFET, IPAN50R500CEXKSA1, N-Canal-Canal, 7,6 A, 500 V, 3-Pin, Cable estrecho TO-220 FullPAK

Infineon MOSFET canal N,, Jusqu'à 220 Full PAK 6,6 A 500 V, 3 broches

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches

Infineon Transistor, NPN Simple, 500 mA, 45 V, SOT-23, 3 broches

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale

Infineon Transistor NPN, 3 Pin, SOT-23, 500 mA, 45 V, Montaggio superficiale

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